GP1600FSS12 Datasheet PDF - Dynex Semiconductor
| Part Number | GP1600FSS12 | |
| Description | Powerline N-Channel Single Switch IGBT Module Advance Information | |
| Manufacturers | Dynex Semiconductor | |
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Replaces October 1999 version, DS5173-3.0
GP1600FSS12
GP1600FSS12
Powerline N-Channel Single Switch IGBT Module
Advance Information
DS5173-4.0 January 2000
The GP1600FSS12 is a single switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.
FEATURES
s n - Channel
s Enhancement Mode
s High Input Impedance
s Optimised For High Power High Frequency Operation
s Isolated Base
s Full 1200V Capability
s 1600A Per Module
VCES
VCE(sat)
IC
I
C(PK)
KEY PARAMETERS
1200V
(typ)
2.7V
(max) 1600A
(max) 3200A
5
6
78
9
12
11
10
3
4
1
2
Outline type code: F
(See package details for further information)
Fig. 1 Electrical connections - (not to scale)
3/4(E)
8(E1)
9(G1)
1/2(C)
7(C1)
Fig.2 Single switch circuit diagram
APPLICATIONS
s High Power Switching
s Motor Control
s Inverters
s Traction Systems
ORDERING INFORMATION
Order As: GP1600FSS12
Note: When ordering, please use the whole part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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SWITCHING DEFINITIONS
t4 + 5µs
∫Eon = Vce.Icdt
t1
td(on) = t2 - t1
tr = t3 - t2
+15V
10%
0V
-15V
90%
10%
t1 t2
t3
t4
Fig.3 Definition of turn-on switching times
GP1600FSS12
Vge
IC
Vce
t7 + 5µs
∫Eoff = Vce.Icdt
t5
td(off) = t6 - t5
tf = t7 - t6
+15V
90%
0V
-15V
90%
10%
Vge
IC
Vce
t5 t6 t7
Fig.4 Definition of turn-off switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GP1600FSS12 electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GP1600FSS12.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| GP1600FSS12 | The function is Powerline N-Channel Single Switch IGBT Module Advance Information. Dynex Semiconductor | |
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