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PDF GP1600FSM12 Data sheet ( Hoja de datos )
| Número de pieza | GP1600FSM12 | |
| Descripción | Single Switch IGBT Module Advance Information | |
| Fabricantes | Dynex Semiconductor | |
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GP1600FSM12
GP1600FSM12
Single Switch IGBT Module
Advance Information
DS5451-1.2 October 2001
FEATURES
s High Thermal Cycling Capability
s 1600A Per Module
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
1200V
(typ) 2.7V
(max) 1600A
(max) 3200A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The GP1600FSM12 is a singlel switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig.1 Single switch circuit diagram
Aux C
Aux E
E1
C1
ORDERING INFORMATION
Order As:
GP1600FSM12
Note: When ordering, please use the complete part number.
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1600FSM12
CURVES
3200
2800
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
2400
2000
1600
1200
800
400
0
0 1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
Fig.5 Typical output characteristics
5.0
3200
2800
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
2400
2000
1600
1200
800
400
0
0 1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
Fig.6 Typical output characteristics
400
Conditions:
Tcase = 25˚C,
350 VCE = 600V,
VGE = 15V
300
A
250
200 B
150 C
100
50 A : Rg = 7Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
0
0 200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig.7 Typical turn-on energy vs collector current
450
Conditions:
400
Tcase = 125˚C,
VCE = 600V,
VGE = 15V
350
A
300
B
250
C
200
150
100
50
0
0
A : Rg = 7Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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