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GN02035B fiches techniques PDF

Panasonic Semiconductor - GaAs IC(with built-in ferroelectric)

Numéro de référence GN02035B
Description GaAs IC(with built-in ferroelectric)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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GN02035B fiche technique
GaAs MMIC
GN02035B
GaAs IC (with built-in ferroelectric)
For mixer with built-in local amplifier of cellular phone
Other communication equipment
s Features
Super miniature S-Mini 6-pin package (2 125 size)
Receiver mixer : Low distortion with local amplifier
s Absolute Maximum Ratings Ta=25°C
Parameter
Symbol Ratings
RF section
Lo input
section
Lo output
section
Mix·Lo
section
IF section
Overall
Input voltage
Input current
Max input power
Input voltage
Input current
Max input power
Output voltage
Output current
Input voltage
Input current
Output voltage
Output current
Allowable power dissipation
Channel temperature
Storage temperature
VIN
IIN
PIN
VIN
IIN
PIN
VOUT
IOUT
VIN
IIN
VOUT
IOUT
PD
Tch
Tstg
3
1
10
3
1
10
5
10
3
1
5
10
100
150
55 to +150
Unit
V
mA
dBm
V
mA
dBm
V
mA
V
mA
V
mA
mW
°C
°C
0.2±0.05
654
R0.2
1
2
3
0.65 0.65
2.0±0.1
Unit : mm
0.12
+0.05
0.02
6 - 0° to 10°
1 : RF in
4 : Lo out
2 : GND
5 : Mix·Lo in
3 : Lo in
6 : IF out
S Mini Type Package (6-pin)
Marking Symbol : KD
s Electrical Characteristics Ta=25°C±3°C
Parameter
Mixer current *1
Local amplifier current *1
Conversion gain *1
Output third harmonics mutual
modulation distortion *1
Noise figure *1, 2
Symbol
IMIX
ILo
CG
OIP3
NF
Conditions
VIFOUT=3 V, fRF=850 MHz
fLo=740 MHz
VLoOUT=3 V, fRF=850 MHz
fLo=740 MHz
VIFOUT=VLoOUT=3 V
fRF=850 MHz, fLo=740 MHz
VIFOUT=VLoOUT=3 V, fRF=850.1 MHz
fLo=740.0 MHz, fIF=110.0 MHz or
110.1 MHz, fIM3=109.9 MHz or 110.2 MHz
VIFOUT=VLoOUT=3 V, fLo=740 MHz
fIF=110 MHz
min
typ max Unit
4.3 mA
3.2 mA
11 dB
7.0 dBm
6.2 dB
Note) *1 : PRF=−27 dBm, PLo=−7 dBm
*2 : Design-guaranteed items.
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