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New Jersey Semiconductor - Silicon Power Rectifier Diode

Numéro de référence WW6002
Description Silicon Power Rectifier Diode
Fabricant New Jersey Semiconductor 
Logo New Jersey Semiconductor 





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WW6002 fiche technique
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
WW5906, WW5907,
WW5980 thru WW6005
Silicon Power Rectifier Diode, 40Amp
Features:
• High Surge Current Capability
• High Voltage Available
• Designed for a Wide Range of Applications
• Available in Anode-to-Case or Cathode-to-Case Style
Ratings and Characteristics:
Average Forward Current (Tc = +140°C Max), IF(AV)
Maximum Forward Surge Current, IFSM
50Hz
60Hz
Fusing Current, I2t
50Hz
60Hz . . .
Fusing Current,
Maximum Reverse Recovery Voltage Range, VRRM
40A
480A
500A
. . . 1150A2s
. . . 1050A2s
16000AVs
50 to 1600V
Voltage Ratings:
Cathode
to Case
5980
5982
5986
5988
5990
5992
5994
5998
6002
5906
6004
Anode
to Case
5981
5983
5987
5989
5991
5993
5995
5999
6003
5907
6005
VRRM-Max
Repetitive Peak
Reverse Volt.
(V)
Tj=-65°to+150°C
50
100
200
300
400
500
600
800
1000
1200
1600
VRSM-MBX
Non-Repetitive Peak
Reverse Voltage
(V) tp < 5ms
Tj = +25°to+150°C
100
200
300
450
500
600
720
960
1200
1400
1700
VR-Max.
Direct Reverse
Voltage
(V)
Tj =-65" to +150°C
50
100
200
300
400
500
600
800
1000
1200
1600
VR(SR)
Minimum Avalanche
Voltage
(V)
Tj = +25°C
-
-
-
-
500
600
725
960
1150
1350
1700
lRM-Max
Reverse Current
Rated VRRM
(mA)
Tj = +150°C
15
15
15
15
15
9
9
9
9
9
9
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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