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PDF H11F1 Data sheet ( Hoja de datos )

Número de pieza H11F1
Descripción PHOTO FET OPTOCOUPLERS
Fabricantes Fairchild Semiconductor　
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! H11F1 Hoja de datos, Descripción, Manual

PHOTO FET OPTOCOUPLERS
PACKAGE
H11F1 H11F2 H11F3
SCHEMATIC
66
1
1
ANODE 1
CATHODE 2
3
6
OUTPUT
TERM.
5
4
OUTPUT
TERM.
6
1
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-
detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor
• ≤ 100Ω to ≥ 300 MΩ
• ≥ 99.9% linearity
• ≤ 15 pF shunt capacitance
• ≥ 100 GΩ I/O isolation resistance
As an analog switch
• Extremely low offset voltage
• 60 Vpk-pk signal capability
• No charge injection or latch-up
• ton, toff ≤ 15 µS
• UL recognized (File #E90700)
• VDE recognized (File #E94766)
– Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor –
• Isolated variable attenuator
• Automatic gain control
• Active filter fine tuning/band switching
As an analog switch –
• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D conversion
© 2002 Fairchild Semiconductor Corporation
Page 1 of 9
6/24/02

1 page




H11F1 pdf
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Figure 7. Resistive non-linearity vs. D.C. Bias
5
4
3
2
I4-6 = 10 µA RMS
r(on) = 200 Ω
1
0
1 50 100 150 200 250 300 350
V4-6 - D.C. BIAS VOLTAGE - mA
© 2002 Fairchild Semiconductor Corporation
Page 5 of 9
6/24/02

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