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IRLML5103TRPbF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRLML5103TRPbF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRLML5103TRPbF fiche technique
IRLML5103PbF
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
G 1 VDSS = -30V
3D
S 2 RDS(on) = 0.60Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro3
Base Part Number
IRLML5103TRPbF
Package Type
Micro3(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML5103TRPbF
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-0.76
-0.61
-4.8
540
4.3
± 20
-5.0
-55 to + 150
Units
A
mW
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient „
Typ.
–––
Max.
230
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
April 24, 2014

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