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Numéro de référence | FTK1N60P | ||
Description | N-CHANNEL MOSFET | ||
Fabricant | First Silicon | ||
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SEMICONDUCTOR
TECHNICAL DATA
FTK1N60P / F / D / I
1.0 Amps, 600 Volts
N-CHANNEL MOSFET
DESCRIPTION
The FTK 1N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 9 .6Ω@VGS =10V
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.5 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2 Drain
Power MOSFET
I:
1
D:
1
TO - 251
TO - 252
P:
1
TO - 220
F:
1
TO - 220F
1.Gate
3 Source
ORDERING INFORMATION
Ordering Number
FTK1N60P
FTK1N60F
FTK1N60I
FTK1N60D
Note: Pin Assignment: G: Gate
D: Drain
Package
TO-220
TO-220F
TO-251
TO-252
S: Source
Pin Assignment
123
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tape Reel
2008. 1. 28
Revision No : 0
1/7
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Pages | Pages 7 | ||
Télécharger | [ FTK1N60P ] |
No | Description détaillée | Fabricant |
FTK1N60D | N-CHANNEL MOSFET | First Silicon |
FTK1N60F | N-CHANNEL MOSFET | First Silicon |
FTK1N60I | N-CHANNEL MOSFET | First Silicon |
FTK1N60P | N-CHANNEL MOSFET | First Silicon |
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