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FCP11N60N fiches techniques PDF

Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FCP11N60N
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FCP11N60N fiche technique
FCP11N60N / FCPF11N60NT
N-Channel MOSFET
600V, 10.8A, 0.299Ω
Features
• RDS(on) = 0.255Ω ( Typ.)@ VGS = 10V, ID = 5.4A
• Ultra Low Gate Charge ( Typ. Qg = 27.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
August 2009
SupreMOSTM
tm
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FCP11N60N FCPF11N60NT
600
±30
10.8 10.8*
6.8 6.8*
(Note 1)
32.4
32.4*
(Note 2)
201.7
3.7
0.94
100
(Note 3)
20
94.0 32.1
0.75 0.26
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
FCP11N60N FCPF11N60NT
1.33 3.9
0.5 0.5
62.5 62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FCP11N60N / FCPF11N60NT Rev. A
1
www.fairchildsemi.com

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