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PDF RFGA2012 Data sheet ( Hoja de datos )
| Número de pieza | RFGA2012 | |
| Descripción | InGaP HBT LOW POWER LINEAR AMPLIFIER | |
| Fabricantes | RFMD | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RFGA2012 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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RFGA2012
InGaP HBT
Low Power Lin-
ear Amplifier
RFGA2012
InGaP HBT LOW POWER LINEAR AMPLIFIER
Package: DFN, 8-Pin, 2mmx2mm
Features
High OIP3=35dBm at 1960MHz
Low DC Power: 3.3V, 23mA
Low NF = 1.6dB at 1960MHz
50MHz to 3000MHz Operation
Power Down Capability
Class 1C (1000V) HBM ESD
Rating
MSL 1 Rating
Common Platform Compatible
Applications
Low Power Linear Gain Stage
IF, Cellular, DCS, PCS, UMTS,
WLAN, WiMax, TD-SCDMA,
LTE Amplifiers
Low Power LNA
NC 1
RFIN 2
GND 3
NC 4
8 VBIAS
7 RFOUT/VCC
6 NC
5 GND
Functional Block Diagram
Product Description
The RFGA2012 is specifically designed to achieve high OIP3 with minimal
DC power. Ultra-linear performance has been demonstated in standard
frequency bands within 150MHz to 3GHz. The RFGA2012 features a
VBIAS pin that allows users to optimize the quiescent current for specific
requirements. The VBIAS pin also serves as a power-down pin. The
RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured
using RFMD's InGaP HBT process to minimize Beta process variation.
DS110215
Ordering Information
RFGA2012SR
RFGA2012SQ
RFGA2012TR7
RFGA2012TR13
RFGA2012PCK-410
RFGA2012PCK-411
7” Reel with 100 pieces
25-piece sample bag
7” Reel with 750 pieces
13” Reel with 2500 pieces
1800MHz to 2200MHz PCBA with 5-piece sample bag
2600MHz to 2700MHz PCBA with 5-piece sample bag
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 12
1 page  
RFGA2012
Typical Performance: 1800MHz to 2200MHz Application Circuit
OIP3 versus Frequency (0dBm tones)
38
OIP3 versus Output Power (1960 MHz)
38
36 36
34 34
32
+25°C
30
-40°C
+85°C
28
1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20
Frequency (GHz)
P1dB versus Frequency
18
16
14
12
+25°C
-40°C
10
+85°C
8
1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20
Frequency (GHz)
Pout & Collector Current vs. Pin @ 1960MHz
18 23
Pout_25C
16 Pout_-40C
22
14 Pout_85C
Ic_25C
21
12 Ic_-40C
20
Ic_85C
10
19
8 18
6 17
4 16
2 15
0 14
-2 13
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4
Input Power (dBm)
32
+25°C
30
-40°C
+85°C
28
-5 -4 -3 -2 -1 0 1 2 3 4 5
Power Out Per Tone (dBm)
Noise Figure versus Frequency
3.0
2.5
2.0
1.5
1.0
+25°C
0.5
+85°C
0.0
1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20
Frequency (GHz)
DS110215
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 12
5 Page 
RFGA2012
Evaluation Board Assembly Drawing
2600MHz to 2700MHz Application Circuit
DS110215
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet RFGA2012.PDF ] | |
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