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PDF 2N2218A Data sheet ( Hoja de datos )
| Número de pieza | 2N2218A | |
| Descripción | SILICON NPN TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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2N2218A TO-5
SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2218A TO-5 is
a silicon NPN transistor manufactured by the epitaxial
planar process, and designed for small signal general
purpose and switching applications.
MARKING CODE: 2N2218A
TO-5 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=60V
ICEV
VCE=60V, VEB=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=10mA
BVEBO
IE=10μA
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
hFE VCE=10V, IC=100μA
hFE VCE=10V, IC=1.0mA
hFE VCE=10V, IC=10mA
hFE VCE=10V, IC=150mA
hFE VCE=1.0V, IC=150mA
hFE VCE=10V, IC=500mA
fT VCE=20V, IC=20mA
Cob VCB=10V, f=100kHz
ton VCC=30V, IC=150mA, IB=15mA
toff VCC=30V, IC=150mA, IB1=IB2=15mA
MIN
75
40
6.0
20
25
35
40
20
25
250
75
40
6.0
800
800
3.0
-65 to +200
MAX
10
10
10
0.3
1.0
1.2
2.0
UNITS
V
V
V
mA
mW
W
°C
UNITS
nA
nA
nA
V
V
V
V
V
V
V
120
MHz
8.0 pF
35 ns
285 ns
R0 (25-April 2014)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N2218A.PDF ] | |
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