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What is P10N60C?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "FQP10N60C".


P10N60C Datasheet PDF - Fairchild Semiconductor

Part Number P10N60C
Description FQP10N60C
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
April 2007
QFET ®
Features
• 9.5A, 600V, RDS(on) = 0.73@VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
GDS
TO-220
FQP Series
GD S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
G
TO-220F
FQPF Series
S
FQP10N60C FQPF10N60C
600
9.5 9.5 *
5.7 5.7 *
38 38 *
± 30
700
9.5
15.6
4.5
156 50
1.25 0.4
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQP10N60C
0.8
0.5
62.5
FQPF10N60C
2.5
--
62.5
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev. C
1
www.fairchildsemi.com

line_dark_gray
P10N60C equivalent
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP10N60C
100
D = 0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0.0 1
1 0 -5
* N o te s :
1 . Z (t) = 0 .8 °C /W M a x.
θJC
2 . D u ty F a c to r, D = t /t
12
3 . T - T = P * Z (t)
JM C
DM θJC
s in g le p u ls e
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a ve P u ls e D u ra tio n [s e c ]
1
101
Figure 11-2. Transient Thermal Response Curve for FQPF10N60C
D = 0 .5
100
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
* N otes :
1 . Z (t) = 2 .5 °C /W M a x.
θJC
2 . D u ty F a c to r, D = t /t
12
3 . T - T = P * Z (t)
JM C
DM θJC
s in g le p u ls e
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
101
FQP10N60C / FQPF10N60C Rev. C
5
www.fairchildsemi.com


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1. - 600V, 9.5A, MOSFET (FQP10N60C)

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