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PDF K3984 Data sheet ( Hoja de datos )

Número de pieza K3984
Descripción MOS FIELD EFFECT TRANSISTOR
Fabricantes NEC 
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3984
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The 2SK3984 is N-channel MOS Field Effect Transistor
designed for high speed switching applications such as
class-D amplifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3984-ZK
TO-252 (MP-3ZK)
FEATURES
Super low on-state resistance
RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A)
RDS(on) = 85 mΩ MAX. (VGS = 10 V, ID = 9 A)
Low Ciss: Ciss = 750 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
ID(DC)
±18
Drain Current (pulse) Note1
ID(pulse)
±45
Total Power Dissipation (TC = 25°C)
PT1 30
Total Power Dissipation (TA = 25°C)
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Tstg 55 to +150
EAS 10
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
IAR 10
EAR 10
V
V
A
A
W
W
°C
°C
mJ
A
mJ
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance Rth(ch-A)
125
4.17
°C/W
°C/W
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
3. Tch(peak) 150°C, RG = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17323EJ2V0DS00 (2nd edition)
Date Published April 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Downloaded from Elcodis.com electronic components distributor
2004

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K3984 pdf
<R>
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
180
ID = 9 A
160 Pulsed
140
120
100 VGS = 10 V
80
60
40
20
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
VGS = 10 V
VDD = 50 V
RG = 0
td(off)
10 td(on)
tr
tf
1
0.1
1000
1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
100 VGS = 10 V
4.5 V
10 0 V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK3984
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
10
VGS = 0 V
f = 1 MHz
1
0.1
1
Crss
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
120
VDD = 80 V
100 50 V
20 V
80
V GS
60
12
10
8
6
40 4
20
0
0
VDS 2
ID = 18 A
0
5 10 15 20
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di / dt = 100 A/μs
VGS = 0 V
1 10
IF - Diode Forward Current - A
100
Data Sheet D17323EJ2V0DS
Downloaded from Elcodis.com electronic components distributor
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