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PDF IRLML6344TRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRLML6344TRPbF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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VDS
VGS Max
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
30
± 12
29
37
Application(s)
• Load/ System Switch
V
V
mΩ
mΩ
G1
S2
Features and Benefits
Low RDSon (<29mΩ)
Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
IRLML6344TRPbF
HEXFET® Power MOSFET
3D
Micro3TM (SOT-23)
IRLML6344TRPbF
results in
Benefits
Lower Conduction Losses
Multi-vendor compatibility
Environmentally friendly
Increased Reliability
Base Part Number
IRLML6344TRPbF
Package Type
Micro3™(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML6344TRPbF
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
Max.
30
5.0
4.0
25
1.3
0.8
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
Parameter
eRθJA Junction-to-Ambient
fRθJA Junction-to-Ambient (t<10s)
Typ.
–––
–––
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Max.
100
99
Units
°C/W
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December 19, 2014
1 page  
IRLML6344TRPbF
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
1000
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
150
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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December 19, 2014
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