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2SC2120 fiches techniques PDF

ETC - NPN Transistor

Numéro de référence 2SC2120
Description NPN Transistor
Fabricant ETC 
Logo ETC 





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2SC2120 fiche technique
TO-92L Plastic-Encapsulate Transistors
2SC2120
TRANSISTOR(NPN)
MAXIMUM RATINGS(Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storag Temperature
Value
35
30
5
0.8
600
150
-55150
Units
V
V
V
A
mW
ELECTRICAL CHARACTERISTICS(Tamb=25unless otherwise specjfied):
Parameter
Collector-base breakdown voltage
Symbol
Test conditions
V(BR)CBO IC=100uA, IE=0
MIN TYP MAX UNIT
35 V
Collector-emittre breakdown’voltage V(BR)CEO IC=1mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO IC=100uA, IC=0
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB=35V, IE=0
IEBO
VEB=5VIC=0
HFE Vce=1VIc=100mA
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=20mA
5
100
V
0.1
0.1
320
0.5 V
Base-emitter voltage
VBE
VCE=1V,IC=10mA
0.5
0.8 V
Transition frequency
fT VCE=5V,IC=10mA
120 MHZ
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
13 pF

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