|
|
Numéro de référence | RF1S50N06SM | ||
Description | Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs | ||
Fabricant | Harris | ||
Logo | |||
1 Page
SEMICONDUCTOR
RFG50N06, RFP50N06,
RF1S50N06, RF1S50N06SM
December 1995
50A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Features
• 50A, 60V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
Description
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
The RFG50N06, RFP50N06, RF1S50N06, and
RF1S50N06SM N-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
PART NUMBER
PACKAGE
BRAND
RFG50N06
TO-247
RFG50N06
RFP50N06
TO-220AB
RFP50N06
RF1S50N06
TO-262AA
F1S50N06
RF1S50N06SM
TO-263AB
F1S50N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.RF1S50N06SM9A.
Formerly developmental type TA49018.
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
JEDEC TO-263AB
Symbol
G
D
GATE
SOURCE
MA
DRAIN
(FLANGE)
S
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . .
VDSS
VDGR
VGS
ID
IDM
EAS
IAM
PD
PT
TSTG,TJ
RFG50N06, RFP50N06
RF1S50N06, RF1S50N06SM
60
60
±20
50
Refer to Peak Current Curve
Refer to UIS Curve
125
131
0.877
-55 to +175
UNITS
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
3-39
File Number 3575.2
|
|||
Pages | Pages 6 | ||
Télécharger | [ RF1S50N06SM ] |
No | Description détaillée | Fabricant |
RF1S50N06SM | 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs | Fairchild Semiconductor |
RF1S50N06SM | 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
RF1S50N06SM | Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs | Harris |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |