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Numéro de référence | GT5G131 | ||
Description | Strobe Flash Applications | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G131
GT5G131
Strobe Flash Applications
Unit: mm
• 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A)
• Supplied in compact and thin package requires only a small
mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• Peak collector current: IC = 130 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 400 V
Gate-emitter voltage
DC VGES
±6
V
Pulse
VGES
±8
Collector current
DC
1 ms
IC
ICP
5
A
130
Collector power dissipation (Note 1)
PC
1.1 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55~150
°C
Note 1: Drive operation: Mount on glass epoxy board [1 inch2 × 1.5 t]
JEDEC
―
JEITA
―
TOSHIBA
2-6J1C
Weight: 0.080 g (typ.)
Equivalent Circuit
8765
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/µs.
1234
1 2002-05-17
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Pages | Pages 6 | ||
Télécharger | [ GT5G131 ] |
No | Description détaillée | Fabricant |
GT5G131 | Strobe Flash Applications | Toshiba Semiconductor |
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