HM624256AP-20 Datasheet PDF - Hitachi Semiconductor
| Part Number | HM624256AP-20 | |
| Description | 262144-word x 4-bit High Speed CMOS Static RAM | |
| Manufacturers | Hitachi Semiconductor | |
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HM624256A Series
262144-word × 4-bit High Speed CMOS Static RAM
Rev. 0.0
Dec. 1, 1995
Description
The Hitachi HM624256A is a high speed 1M Static RAM organized as 262,144-word × 4-bit. It realizes
high speed access time (20/25/35 ns) and low power consumption, employing CMOS process technology
and high speed circuit designing technology. It is most advantageous for the field where high speed and
high density memory is required, such as the cache memory for main frame or 32-bit MPU. The
HM624256A, packaged in a 400-mil plastic SOJ is available for high density mounting.
Features
• Single 5 V supply and high density 28-pin package (DIP and SOJ)
• High speed
Access time: 20/25/35 ns (max)
• Low power dissipation
Active mode: 350 mW (typ)
Standby mode: 100 µW (typ)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle time
• Directly TTL compatible
All inputs and outputs
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HM624256A Series
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter
Symbol
Min
Supply voltage
VCC 4.5
VSS 0
Input high (logic 1) voltage
VIH
2.2
Input low (logic 0) voltage
VIL
–0.5*1
Note: 1. VIL min = –2.0 V for pulse width ≤ 10 ns
Typ
5.0
0
—
—
Max Unit
5.5 V
0V
6.0 V
0.8 V
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)
Parameter
Input leakage current
Symbol
|ILI|
HM624256A-20
Min Typ*1 Max
— — 2.0
HM624256A-25/35
Min Typ*1 Max
— — 2.0
Output leakage current |ILO|
— — 2.0 — — 2.0
Operating power supply
current
Standby power supply
current
Standby power supply
current (1)
I CC
I SB
I SB1
— — 150 — — 120
— — 60 — — 40
— 0.02 2.0 — 0.02 2.0
I *2
SB1
— — 100*2 — —
100*2
Output low voltage VOL — — 0.4 — — 0.4
Output high voltage
VOH
2.4 — — 2.4 — —
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
2. L-version
Unit Test Conditions
µA VCC = max
Vin = VSS to VCC
µA CS = VIH
VI/O = VSS to VCC
mA CS = VIL, II/O = 0 mA,
min cycle
mA CS = VIH,
min cycle
mA CS ≥ VCC – 0.2 V
0 V ≤ Vin ≤ 0.2 V or
Vin ≥ VCC – 0.2 V
µA
V IOL = 8 mA
V IOH = –4 mA
Capacitance (Ta = 25°C, f = 1 MHz)
Parameter
Input capacitance
Symbol
Cin
Min
—
Max
5*2
— 6*3
Input/output capacitance
CI/O
—
8
Notes: 1. This parameter is sampled and not 100% tested.
2. SOJ package
3. DIP package
Unit
pF
pF
pF
Test Conditions
Vin = 0 V
VI/O = 0 V
5
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| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HM624256AP-20.PDF Datasheet ] | |
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