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PDF GT30J101 Data sheet ( Hoja de datos )
| Número de pieza | GT30J101 | |
| Descripción | Silicon N Channel IGBT | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GT30J101 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Preliminary
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT30J101
High Power Switching Applications
GT30J101
Unit: mm
• The 3rd Generation
• Enhancement-Mode
• High Speed: tf = 0.30 µs (max)
• Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
600
±20
30
60
155
150
−55~150
Unit
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 4.6 g
―
―
2-16C1C
1 2002-01-18
1 page  
10000
C – VCE
3000
1000
Cies
300
100
Common emitter
Coes
30
VGE = 0
f = 1 MHz
Tc = 25°C
Cres
10
0.3 1
3 10 30 100 300 1000
Collector-emitter voltage VCE (V)
Safe operating area
100
IC max (pulsed)*
50 IC max
30 (continuous)
100 µs*
50 µs*
10
DC
5 operation
3
1 ms*
10 ms*
*: Single nonrepetitive
1 pulse
0.5 Tc = 25°C
0.3 Curves must be derated
linearly with increase in
temperature.
0.1
1 3 10
30
100 300 1000 3000
Collector-emitter voltage VCE (V)
GT30J101
VCE, VGE – QG
500
Common emitter
RL = 10 Ω
400 Tc = 25°C
300 300
VCE = 100 V 200
200
20
16
12
8
100 4
00
0 20 40 60 80 100
Gate charge QG (nC)
Reverse bias SOA
100
50
30
10
5
3
1
0.5 Tj <= 125°C
0.3 VGE = ±15 V
RG = 43 Ω
0.1
1 3 10 30 100 300 1000 3000
Collector-emitter voltage VCE (V)
102 Rth (t) – tw
101
100
10−1
10−2
10−3
10−410−5
10−4
10−3
10−2
Tc = 25°C
10−1 100 101 102
Pulse width tw (s)
5
2002-01-18
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT30J101.PDF ] | |
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