|
|
Datasheet GT28F400B3T120-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
GT2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GT20D101 | N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION) Toshiba Semiconductor amplifier | | |
2 | GT20D201 | P CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS) Toshiba Semiconductor amplifier | | |
3 | GT20G101 | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
4 | GT20G101SM | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
5 | GT20G102 | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
6 | GT20G102SM | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
7 | GT20J101 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J101
High Power Switching Applications
Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25° Toshiba Semiconductor igbt | |
Esta página es del resultado de búsqueda del GT28F400B3T120-PDF.HTML. Si pulsa el resultado de búsqueda de GT28F400B3T120-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |