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Datasheet GT28F032C3B110-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
GT2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GT20D101 | N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION) Toshiba Semiconductor amplifier | | |
| 2 | GT20D201 | P CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS) Toshiba Semiconductor amplifier | | |
| 3 | GT20G101 | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
| 4 | GT20G101SM | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
| 5 | GT20G102 | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
| 6 | GT20G102SM | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Toshiba Semiconductor igbt | | |
| 7 | GT20J101 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J101
High Power Switching Applications
Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25° Toshiba Semiconductor igbt | |
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