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PDF GT25G101 Data sheet ( Hoja de datos )
| Número de pieza | GT25G101 | |
| Descripción | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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GT25G101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT25G101
STROBE FLASH APPLICATIONS
Unit in mm
l High Input Impedance
l Low Saturation Voltage
l Enhancement−Mode
l 20V Gate Drive
: VCE (sat)=8V (Max.) (IC=170A)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
DC
1ms
Collector Power
Dissipation
Ta=25°C
Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL
VCES
VGES
IC
ICP
PC
PC
Tj
Tstg
RATING
400
±25
25
170
1.3
75
150
−55~150
ELECTRICAL CHARACTERISTICS (Ta=25°C)
UNIT
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight : 1.5g
―
―
2−10S1C
CHARACTERISTIC
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−on Time
Fall Time
Turn−off Time
Thermal Resistance
SYMBOL
TEST CONDITION
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
Rth (j−c)
VGE=±25V, VCE=0
VCE=400V, VGE=0
IC=1mA, VCE=5V
IC=170A, VGE=20V (Pulsed)
VCE=10V, VGE=0, f=1MHz
―
MIN. TYP. MAX. UNIT
― ― ±100 nA
― ― 10 µA
4 5 7V
―5 8 V
― 2000 ―
pF
― 0.1 0.5
― 0.15 0.5
― 4.0 6.0
µs
― 4.5 7.0
― ― 1.66 °C / W
1 2002-02-06
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet GT25G101.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GT25G101 | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
| GT25G101SM | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
| GT25G102 | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
| GT25G102SM | N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
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