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Numéro de référence | GSQ05A04 | ||
Description | SBD | ||
Fabricant | ETC | ||
Logo | |||
5A Avg.
40 Volts SBD
GSQ05A04
20
10
5
2
1
0.5
0
FORWARD CURRENT VS. VOLTAGE
GSQ05A04/GSQ05A04B
0° 180°
θ
CONDUCTION ANGLE
5
4
3
Tj=25°C
Tj=150°C
2
1
0.2 0.4 0.6 0.8
INSTANTANEOUS FORWARD VOLTAGE (V)
1.0
1.2
0
0
AVERAGE FORWARD POWER DISSIPATION
GSQ05A04/GSQ05A04B
D.C.
RECT 60°
RECT 180°
HALF SINE WAVE
RECT 120°
24
AVERAGE FORWARD CURRENT (A)
6
8
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
200
Tj= 150°C
GSQ05A04/GSQ05A04B
100
50
0
10 20 30
PEAK REVERSE VOLTAGE (V)
40
0° 180°
θ
AVERAGE REVERSE POWER DISSIPATION
CONDUCTION ANGLE
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
SURGE CURRENT RATINGS
8
GSQ05A04/GSQ05A04B
VRM=40V
GSQ05A04/GSQ05A04B
140
f=50Hz,Half Sine Wave,Non-Repetitive,No Load
GSQ05A04/GSQ05A04B
7 D.C. 8 D.C.
120
6 RECT 300°
5 RECT 240°
4
RECT 240°
3
HALF SINE WAVE
2
1
0
0 10 20 30 40
REVERSE VOLTAGE (V)
6 RECT 180°
HALF SINE WAVE
RECT 120°
4
RECT 60°
2
0
0 25
50 75 100
CASE TEMPERATURE (°C)
125
150
100
80
60
40
20
0
0.02
0.02s
0.05
I FSM
0.1 0.2
TIME (s)
0.5 1
2
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
1000
Tj=25°C,Vm=20mVRMS, f=100kHz, Typical Value
GSQ05A04/GSQ05A04B
500
200
100
0.5
1
2 5 10
REVERSE VOLTAGE (V)
20
50
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Pages | Pages 1 | ||
Télécharger | [ GSQ05A04 ] |
No | Description détaillée | Fabricant |
GSQ05A04 | SBD | ETC |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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