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Vishay Siliconix - Dual In-Series Small-Signal High-Voltage Switching Diode

Numéro de référence GSD2004S
Description Dual In-Series Small-Signal High-Voltage Switching Diode
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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GSD2004S fiche technique
VISHAY
GSD2004S
Vishay Semiconductors
Dual In-Series Small-Signal High-Voltage Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Fast switching dual in-series diode, especially
suited for applications requiring high voltage
capability
Mechanical Data
Case: SOT-23 (TO-236AB) Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
GSD2004S
Ordering code
GSD2004S-GS18 or GSD2004S-GS08
2
1
3
3
12
18545
Marking
DB6
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Peak repetitive reverse voltage
Peak repetitive reverse current
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward
current
Power dissipation
tp = 1 µs
tp = 1 s
1) Device on Fiberglass Substrate, see layout on second page
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
junction to ambiant air
Junction temperature
Test condition
Storage temperature range
1) Device on Fiberglass Substrate, see layout on second page
Symbol
VR
VRRM
IRRM
IF
IRFM
IFSM
IFSM
Ptot
Symbol
RthJA
Tj
TS
Value
240
300
200
225
625
4.0
1.0
3501)
Value
3571)
150
- 65 to + 150
Unit
V
V
mA
mA
mA
A
A
mW
Unit
°C/W
°C
°C
Document Number 85728
Rev. 1.3, 08-Jul-04
www.vishay.com
1

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