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Vishay Siliconix - Dual Common-Anode Small-Signal High-Voltage Switching Diode

Numéro de référence GSD2004A-GS18
Description Dual Common-Anode Small-Signal High-Voltage Switching Diode
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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GSD2004A-GS18 fiche technique
VISHAY
GSD2004A
Vishay Semiconductors
Dual Common-Anode Small-Signal High-Voltage Switching
Diode
Features
• Silicon Epitaxial Planar Diode
• Fast switching dual common-anode diode, espe-
cially suited for applications requiring high voltage
capability
Mechanical Data
Case: SOT-23 (TO-236AB) Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
GSD2004A
Ordering code
GSD2004A-GS18 or GSD2004A-GS08
2
1
3
3
12
17033
DBA
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Peak repetitive reverse voltage
Peak repetitive reverse current
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward
current
Power dissipation
tp = 1 µs
tp = 1 s
1) Device on Fiberglass Substrate, see layout on bottom of second page
Symbol
VR
VRRM
IRRM
IF
IRFM
IFSM
IFSM
Ptot
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
junction to ambiant air
Junction temperature
Test condition
Storage temperature range
1) Device on Fiberglass Substrate, see layout on bottom of second page
Symbol
RthJA
Tj
TS
Value
240
300
200
225
625
4.0
1.0
3501)
Value
3571)
150
- 65 to + 150
Unit
V
V
mA
mA
mA
A
A
mW
Unit
°C/W
°C
°C
Document Number 85727
Rev. 1.3, 08-Jul-04
www.vishay.com
1

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