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UNR2114 fiches techniques PDF

Panasonic Semiconductor - Transistors

Numéro de référence UNR2114
Description Transistors
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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UNR2114 fiche technique
Transistors with built-in Resistor
UNR211x Series (UN211x Series)
Silicon PNP epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
Resistance by Part Number
UNR2110
UNR2111
UNR2112
UNR2113
Marking Symbol (R1)
(UN2110) 6L
47 k
(UN2111) 6A
10 k
(UN2112) 6B
22 k
(UN2113) 6C
47 k
UNR2114 (UN2114) 6D
10 k
UNR2115 (UN2115) 6E
10 k
UNR2116 (UN2116) 6F
4.7 k
UNR2117 (UN2117) 6H
22 k
UNR2118 (UN2118) 6I
0.51 k
UNR2119 (UN2119)
UNR211D (UN211D)
UNR211E (UN211E)
UNR211F (UN211F)
UNR211H (UN211H)
UNR211L (UN211L)
6K
6M
6N
6O
6P
6Q
1 k
47 k
47 k
4.7 k
2.2 k
4.7 k
UNR211M (UN211M) EI
2.2 k
UNR211N (UN211N) EW 4.7 k
UNR211T (UN211T) EY
22 k
UNR211V (UN211V) FC
2.2 k
UNR211Z (UN211Z) FE
4.7 k
(R2)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
10 k
4.7 k
47 k
47 k
47 k
2.2 k
22 k
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R1
B
R2
C
E
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
200
150
55 to +150
Unit
V
V
mA
mW
°C
°C
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00006CED
1

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