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Philips Semiconductors - PHP45N03LT

Numéro de référence 45N03LT
Description PHP45N03LT
Fabricant Philips Semiconductors 
Logo Philips Semiconductors 





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45N03LT fiche technique
Philips Semiconductors
TrenchMOStransistor
Logic level FET
Product specification
PHP45N03LT
FEATURES
’Trench’ technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 30 V
ID = 45 A
RDS(ON) 24 m(VGS = 5 V)
RDS(ON) 21 m(VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
using ’trench’ technology. The
device has very low on-state
resistance. It is intended for use in
dc to dc converters and general
purpose switching applications.
The PHP45N03LT is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
15
45
36
180
86
175
UNIT
V
V
V
A
A
A
W
˚C
TYP.
-
60
MAX.
1.75
-
UNIT
K/W
K/W
November 1997
1
Rev 1.200

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