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2SC4129 fiches techniques PDF

INCHANGE - Silicon NPN Power Transistor

Numéro de référence 2SC4129
Description Silicon NPN Power Transistor
Fabricant INCHANGE 
Logo INCHANGE 





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2SC4129 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4129
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
7A
1.5
W
30
150
-55~150
isc Websitewww.iscsemi.cn

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