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Numéro de référence | 2SC4129 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | INCHANGE | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4129
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
7A
1.5
W
30
150 ℃
-55~150 ℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SC4129 ] |
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