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2SA1145 fiches techniques PDF

LGE - NPN Transistor

Numéro de référence 2SA1145
Description NPN Transistor
Fabricant LGE 
Logo LGE 





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2SA1145 fiche technique
2SA1145
TO-92MOD Transistor (PNP)
1. EMITTER
1 2. COLLECTOR
2
3 3. BASE
Features
— Complementary to 2SC2705
— Small collector output capacitance: Cob=2.5pF(Typ.)
— High transition frequency: fT=200MHz(Typ.)
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-150
-150
-5
-50
800
150
-55-150
Units
V
V
V
mA
mW
TO-92MOD
5.800
6.200
0.400
0.600
0.900
1.100
8.400
8.800
13.800
14.200
0.000
0.380
1.500 TYP
2.900
3.100
1.600
0.400 4.700
0.500 5.100
4.000
1.730
2.030
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=-100 μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-100 μA, IC=0
ICBO VCB=-150 V, IE=0
IEBO VEB=-5 V, IC=0
hFE VCE=-5 V, IC=-10mA
VCE(sat) IC=-10mA, IB=-1mA
VBE VCE=-5 V, IC=-10mA
fT VCE=-5 V, IC=-10mA
Cob VCB=-10 V, IE=0, f=1 MHz
MIN TYP MAX UNIT
-150
V
-150
V
-5 V
-0.1 μA
-0.1 μA
80 240
-1 V
-0.8 V
200 MHz
2.5 pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
80-160
Y
120-240

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