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RFMD - 0.7 GHz to 2.2 GHz 2W InGaP Amplifier

Numéro de référence SPB-2026Z
Description 0.7 GHz to 2.2 GHz 2W InGaP Amplifier
Fabricant RFMD 
Logo RFMD 





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SPB-2026Z fiche technique
RFMD® SPB-2026Z
0.7 GHz to 2.2 GHz 2W InGaP Amplifier
The SPB-2026Z is a high-performance, high-linearity 0.7 GHz to 2.2 GHz 2 watt single-stage Class AB heterojunction bipolar transistor
(HBT) amplifier, housed in a surface-mountable, plastic encapsulated package. This InGaP amplifier is well suited for use as a driver
stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It is pre-
matched to approximately 5 ohms at the RF input for broadband performance and ease of matching at the board level. The SPB-
2026Z features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable
and thermally enhanced SOF-26 package.
SPB-2026Z SPECIFICATIONS
Frequency
Gain
0.7 GHz to 2.2 GHz
13.7 dB
1 - W-CDMA modulation, 64 DPCH overhead, -45 dBc ACPR
Id
445 mA
NF
5.2 dB
Output IP3
33.8 dBm
FEATURES
P1 dB = 33.8 dBm at 5 V, 1960 MHz
ACP = -45 dBc with 25 dBm Ch. Pwr at 1960 MHz
On-chip input power detector
Power up/down control
Low thermal resistance package
Low power dissipation
Robust Class 1C ESD
RoHS and WEEE compliant
For sales or technical support, contact RFMD at 336.678.5570, Ext. 1 or [email protected]
For customer service, contact RFMD at 336.678.5570, Ext. 2 or [email protected]
7628 Thorndike Road, Greensboro, North Carolina 27409-9421 USA • Phone 336.664.1233 • Fax 336.931.7454
RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their
respective owners. ©2008 RFMD.
SPB.5.08.1500
P1dB
25 dBm 1
Vcc
5.0

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