DataSheetWiki

SPB2026Z Datasheet دیتاشیت PDF دانلود

دیتاشیت - RFMD - 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER

شماره قطعه SPB2026Z
شرح مفصل 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER
تولید کننده RFMD 
آرم RFMD 


1 Page

		

No Preview Available !

SPB2026Z شرح
SPB2026Z
0.7GHz to
2.2GHz 2W
InGaP Ampli-
fier
SPB2026Z
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER
NOT FOR NEW DESIGNS
Package: SOF-26
Product Description
RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar
Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated
package. This HBT amplifier is made with InGaP on GaAs device technology and
fabricated with MOCVD for an ideal combination of low cost and high reliability. This
product is well suited for use as a driver stage in macro/micro-cell infrastructure
equipment or as the final output stage in pico-cell infrastructure equipment. It can
run from a 3V to 6V supply. It is prematched to ~5on the input for broadband
performance and ease of matching at the board level. It features an input power
detector, on/off power control, ESD protection, excellent over-
Optimum Technology
Matching® Applied
all robustness and a hand reworkable and thermally enhanced
SOF-26 package. This product is RoHS and WEEE compliant.
GaAs HBT
GaAs MESFET
p
Vcc = 5V
InGaP HBT
SiGe BiCMOS
Functional Block Diagram
Si BiCMOS
SSZPPB- 2-2002266
SiGe HBT
GaAs pHEMT
Si CMOS
RFIN
V bias = 5V
A c tiv e
Bias
RFOUT
Si BJT
GaN HEMT
RF MEMS
Pow er
Up/Dow n
Co n tr o l
Pow er
Detec tor
Features
P1dB=33.8dBm at 5V,
1960 MHz
ACP=-45dBc with 25dBm
Channel Power at 1960MHz
On-Chip Input Power Detector
Low Thermal Resistance
Package
Power Up/Down Control <1s
Robust Class 1C ESD
Applications
Macro/Micro-Cell Driver
Stage
Pico-Cell Output Stage
GSM, CDMA, TDSCDMA,
WCDMA
Single and Multi-Carrier Appli-
cations
Parameter
Small Signal Gain
Output Power at 1dB Compression
Third Order Supression
WCDMA Channel Power
WCDMA Channel Power
Min.
12.2
12.1
31.3
-42.0
Specification
Typ.
13.6
13.7
13.6
33.9
33.8
32.8
-49.0
-45.0
-48.0
-55.0
-55.0
-55.0
-45.0
Input Return Loss
11.0
14.0
Output Return Loss
9.0 12.0
Noise Figure
Voltage Range
5.2
0.85 to 1.4
Thermal Resistance
12.0
Quiescent Current
380 445
Power up Control Current
2.1
VCC Leakage Current
Test Conditions: VCC=5V, ICQ=445mA Typ., TL=25°C, ZS=ZL=50
Max.
15.2
15.1
-48.0
6.2
500
100
Unit
dB
dB
dB
dBm
dBm
dBm
dBc
dBc
dBc
dBc ACP
dBc ACP
dBc ACP
dBc ACP
dB
dB
dB
V
°C/W
mA
mA
uA
Condition
1842 MHz
1960 MHz
2140 MHz
1842 MHz
1960 MHz
2140 MHz
1842MHz, 22dBm per tone, 1MHz spacing
1960MHz, 22dBm per tone, 1MHz spacing
2140MHz, 22dBm per tone, 1MHz spacing
1842MHz, tested with 64 Channels, FWD, 23dBm
1960MHz, tested with 64 Channels, FWD, 23dBm
2140MHz, tested with 64 Channels, FWD, 23dBm
1842MHz, 1960MHz, and 2140MHz. Tested with
64 Channels, FWD, 25dBm.
1930MHz to 1990MHz
1930MHz to 1990MHz
1960 MHz
CW POUT=13dBm to 33dBm
junction - lead
VCC = 5 V
VPC = 5 V
VCC=5V, VPC=0V
DS120601
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 16

قانون اساسیصفحه 16
دانلود [ SPB2026Z دیتاشیت ]



دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
SPB2026Z 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER RFMD
RFMD

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2019   |   تماس با ما  |   جستجو