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PDF SIM75D06AV1 Data sheet ( Hoja de datos )

Número de pieza SIM75D06AV1
Descripción HALF-BRIDGE IGBT
Fabricantes SemiWell Semiconductor 
Logotipo SemiWell Semiconductor Logotipo



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Preliminary
SIM75D06AV1
“HALF-BRIDGE” IGBT MODULE
Feature
design technology
Low VCE (sat)
Low Turn-off losses
Short tail current for over 20KHz
Applications
Motor controls
VVVF inverters
Inverter-type welding MC over 18KHZ
SMPS, Electrolysis
UPS/EPS, Robotics
Absolute Maximum Ratings @ Tj=25 (Per Leg)
Package : V1
Symbol
Parameter
Condition
VCES
VGES
IC
ICP
IF
IFM
tp
Viso
Tj
Tstg
Weight
Md
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, VGE = 15V, VCC = 360V
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Mounting torque with screw : M5
Terminal connection torque : M5
TC =
TC = 80
TC =
TC = 80
TC =
TC = 150
AC @ 1 minute
VCES = 600V
Ic= 75A
VCE(ON) typ. = 1.5V
@Ic= 75A
Ratings
600
20
75 (100)
140
75 (100)
140
6 (8)
2500
-40 ~ 150
-40 ~ 125
190
2.0
2.0
Unit
V
V
A
A
A
A
V
g
N.m
N.m
Static Characteristics @ Tj = 25 (unless otherwise specified)
Parameters
VCE(ON)
VGE(th)
ICES
IGES
VF
RGINT
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Integrated gate resistor
Min
Typ
1.50
5.8
1.6
4
Max Unit
Test conditions
IC = 75A, VGE = 15V
V
VCE = VGE, IC = 4
5.0 VGE = 0V, VCE = 600V
400 VCE = 0V, VGE = V
2.0 V IF = 75A, VGE = 0V

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