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Numéro de référence | SIM400D06AV3 | ||
Description | HALF-BRIDGE IGBT | ||
Fabricant | SemiWell Semiconductor | ||
Logo | |||
Preliminary
SIM400D06AV3
“HALF-BRIDGE” IGBT MODULE
Feature
▪
design technology
▪ Low VCE (sat)
▪ Low Turn-off losses
▪ Short tail current for over 20KHz
Applications
▪ Motor controls
▪ VVVF inverters
▪ Inverter-type welding MC over 18KHZ
▪ SMPS, Electrolysis
▪ UPS/EPS, Robotics
Package : V3
Absolute Maximum Ratings @ Tj=25 (Per Leg)
Symbol
VCES
VGE
IC
ICP
IF
IFM
tp
Viso
Weight
Tj
Tstg
Md
Parameter
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, VGE = 15V, VCC = 360V
Isolation Voltage test
Weight of Module
Junction Temperature
Storage Temperature
Mounting torque with screw : M6
Condition
TC =
TC = 80
TC = 25
TC = 80
TC =
TC = 150 25
AC @ 1 minute
VCES = 600V
Ic=400A
VCE(ON) typ. = 1.6V
@Ic=400A
Ratings
600
20
400 (500)
800
400 (500)
800
6 (8)
2500
360
-40 ~ 150
-40 ~ 125
4.0
Unit
V
V
A
A
A
A
V
g
N.m
Static Characteristics @ Tj = 25 (unless otherwise specified)
Parameters
VCE(ON)
VGE(th)
ICES
IGES
VF
RGINT
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Integrated gate resistor
Min
Typ
1.60
5.8
1.6
1
Max Unit
Test conditions
1.95
6.5
5.0
400
2.0
IC = 400A, VGE = 15V
V
VCE = VGE, Ic = 8
VGE = 0V, VCE = 600V
VCE = 0V, VGE = V
V IF = 400A, VGE = 0V
Ω
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Pages | Pages 4 | ||
Télécharger | [ SIM400D06AV3 ] |
No | Description détaillée | Fabricant |
SIM400D06AV3 | HALF-BRIDGE IGBT | SemiWell Semiconductor |
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