|
|
PDF SMK1060PS Data sheet ( Hoja de datos )
| Número de pieza | SMK1060PS | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | AUK | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SMK1060PS (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
Semiconductor
SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage: BVDSS=600V(Min.)
• Low Crss : Crss=18pF(Typ.)
• Low gate charge : Qg=35nc(Typ.)
• Low RDS(on) :RDS(on)=0.75Ω(Max.)
Ordering Information
Type No.
Marking
SMK1060PS
SMK1060
Package Code
TO-220AB-3L
SMK1060PS
Advanced N-Ch Power MOSFET
PIN Connection
D
G
GDS
TO-220AB-3L
S
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
Drain current (DC)*
VGSS
(Tc=25℃)
ID (Tc=100℃)
Drain current (Pulsed)*
IDM
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
②
②
①
①
PD
IAS
EAS
IAR
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
600
±30
10
6.32
40
120
10
490
10
11.6
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-a)
Typ.
-
-
Max
1.04
62.5
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Unit
℃/W
KSD-T0O018-000
1
1 page  
Fig. 10 Gate Charge Test Circuit & Waveform
SMK1060PS
Fig. 11 Resistive Switching Test Circuit & Waveform
Fig. 12 EAS Test Circuit & Waveform
KSD-T0O018-000
5
5 Page 
SMK0870F
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
④
Forward transfer conductance ④
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test Condition
ID=250μA, VGS=0
ID=250μA, VDS= VGS
VDS=700V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=4.0A
VDS=10V, ID=4.0A
VGS=0V, VDS=25V
f=1MHz
VDD=300V, ID=10A
RG=25Ω
③④
VDS=560V, VGS=10V
ID=8A
③④
Min.
700
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.77
11
2006
148
13.7
23
69
144
77
32
9
8
(Tc=25°C)
Max. Unit
-V
4.0 V
1 μA
±100 nA
0.90
Ω
-S
2507
185 pF
17.1
-
-
ns
-
-
40
- nC
-
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
Source current (DC)
Source current (Pulsed)
Forward voltage
IS Integral reverse diode
① ISM in the MOSFET
④ VSD VGS=0V, IS=8A
Reverse recovery time
Reverse recovery charge
trr Is=8A, VGS=0,
Qrr diS/dt=100A/ us
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=7.74mH, IAS=8A, VDD=50V, RG=25Ω , Starting TJ = 25℃
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
(Tc=25°C)
Min Typ Max Unit
--
8
A
- - 32
- - 1.4 V
- 420
-
ns
- 4.2
-
uC
KSD-T0O035-000
3
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet SMK1060PS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SMK1060P | Advanced N-Ch Power MOSFET |  KODENSHI KOREA |
| SMK1060PS | Advanced N-Ch Power MOSFET | AUK |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |