|
|
Numéro de référence | K2394 | ||
Description | N-Channel Junction Silicon FET | ||
Fabricant | Sanyo Semicon Device | ||
Logo | |||
1 Page
Ordering number:EN4839A
N-Channel Junction Silicon FET
2SK2394
Low-Noise HF Amplifier Applications
Applications
· AM tuner RF amplifier.
· Low-noise amplifier.
Features
· Largeyfs.
· Small Ciss.
· Small-sized package permitting 2SK2394-applied
sets to be made small slim.
· Ultralow noise figure.
Specifications
Package Dimensions
unit:mm
2050A
[2SK2394]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
1 : Source
2 : Drain
3 : Gate
SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
NF
IG=–10µA, VDS=0
VGS=–10V, VDS=0
VDS=5V, ID=100µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
* : The 2SK2394 is classified by IDSS as follows : (unit : mA) 6.0 5 12.0 10.0 6 20.0 16.0
Marking : YJ
IDSS rank : 5, 6, 7
Ratings
15
–15
10
50
200
150
–55 to +150
Ratings
min typ
–15
–0.3
6.0*
20
–0.7
38
10.0
2.9
1.0
max
–1.0
–1.5
32.0*
7 32.0
Unit
V
V
mA
mA
mW
˚C
˚C
Unit
V
nA
V
mA
mS
pF
pF
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22299TS/73094MT (KOTO) BX-1128 No.4839–1/3
|
|||
Pages | Pages 3 | ||
Télécharger | [ K2394 ] |
No | Description détaillée | Fabricant |
K2391 | Field Effect Transistor | Toshiba Semiconductor |
K2394 | N-Channel Junction Silicon FET | Sanyo Semicon Device |
K2394 | N-Channel JFET | ON Semiconductor |
K2395 | N-Channel Junction Silicon FET | Sanyo Semicon Device |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |