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Toshiba - Field Effect Transistor

Numéro de référence K2398
Description Field Effect Transistor
Fabricant Toshiba 
Logo Toshiba 





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K2398 fiche technique
2SK2398
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2398
DCDC Converter and Motor Drive Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 22 m(typ.)
l High forward transfer admittance : |Yfs| = 27 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 60 V)
l Enhancementmode
: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
60
60
±20
45
180
100
246
45
10
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.25
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 165 µH, RG = 25 , IAR = 45 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-07-22

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