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HM621664HBJP-20 fiches techniques PDF

Hitachi Semiconductor - 1M High Speed SRAM

Numéro de référence HM621664HBJP-20
Description 1M High Speed SRAM
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HM621664HBJP-20 fiche technique
HM621664HB Series
1 M High Speed SRAM (64-kword × 16-bit)
ADE-203-349B(Z)
Rev. 2.0
Nov. 1997
Description
The HM621664HB is an asynchronous high speed static RAM organized as 64-kword × 16-bit. It realize
high speed access time (15/20 ns) with employing 0.8 µm CMOS process and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. The HM621664HB is packaged
in 400-mil 44-pin SOJ for high density surface mounting.
Features
Single 5 V supply
Access time: 15/20 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
400-mil 44-pin SOJ package
Center VCC and VSS type pinout
Ordering Information
Type No.
HM621664HBJP-15
HM621664HBJP-20
HM621664HBLJP-15
HM621664HBLJP-20
Access time
15 ns
20 ns
15 ns
20 ns
Package
400-mil 44-pin plastic SOJ (CP-44D)

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