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INCHANGE - Silicon NPN Power Transistor

Numéro de référence C1969
Description Silicon NPN Power Transistor
Fabricant INCHANGE 
Logo INCHANGE 





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C1969 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1969
DESCRIPTION
·High Power Gain-
: Gpe12dB,f= 27MHz, PO= 16W
·High Reliability
APPLICATIONS
·Designed for 10~14 watts output power class AB amplifiers
applications in HF band.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage RBE=
25
V
VEBO Emitter-Base Voltage
5V
IC Collector Current
Collector Power Dissipation
@TC=25
PC
Collector Power Dissipation
@Ta=25
Tj Junction Temperature
Tstg Storage Temperature Range
6A
20
W
1.7
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient 73.5 /W
Thermal Resistance,Junction to Case
6.25 /W
isc websitewww.iscsemi.cn
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