|
|
Numéro de référence | C1969 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | INCHANGE | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1969
DESCRIPTION
·High Power Gain-
: Gpe≥12dB,f= 27MHz, PO= 16W
·High Reliability
APPLICATIONS
·Designed for 10~14 watts output power class AB amplifiers
applications in HF band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage RBE= ∞
25
V
VEBO Emitter-Base Voltage
5V
IC Collector Current
Collector Power Dissipation
@TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
6A
20
W
1.7
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient 73.5 ℃/W
Thermal Resistance,Junction to Case
6.25 ℃/W
isc website:www.iscsemi.cn
1
|
|||
Pages | Pages 2 | ||
Télécharger | [ C1969 ] |
No | Description détaillée | Fabricant |
C1968 | NPN Transistor - 2SC1968 | Mitsubishi |
C1968 | Silicon NPN POWER TRANSISTOR | HGSemi |
C1968A | NPN Transistor - 2SC1968A | Mitsubishi |
C1969 | NPN Transistor - 2SC1969 | Mitsubishi Electric Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |