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Numéro de référence | C1969 | ||
Description | silicon NPN epitaxial planar type transistor | ||
Fabricant | eleflow | ||
Logo | |||
1 Page
Description
The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed
for RF power amplifiers within the HF band, ideal for mobile radio applications.
Features
• High power gain: Gpe ≥ 12dB
@Vcc = 12V, Po = 16W, f = 27MHz
• Emitter ballasted construction for reliability and performance.
• Manufactured incorporating recyclable RoHS compliant materials.
• Ability to periodically withstand infinite VSWR load when operated
@ Vcc = 16V, Po = 20W, f = 27MHz.
Application
10 to 14 watts output power class AB amplifier applications within
HF band.
2SC1969
TO-220 Package
Absolute Maximum Ratings (Tc = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Vcbo
Vebo
Veco
Ic
Pc
Tj
Tstg
Rth-a
Rth-c
Collector to base voltage
Emitter to base voltage
Collector to emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Thermal resistance
Rbe =
Ta = 25°C
Tc = 25°C
Junction to ambient
Junction to case
Note: Above parameters are guaranteed independently
Ratings
60
5
25
6
1.7
20
150
-55 to 150
73.5
6.25
Unit
V
V
V
A
W
W
°C
°C
°C/W
°C/W
Electrical Characteristics (Tc = 25°C unless otherwise specified)
Symbol
Parameter
V(BR)ebo
V(BR)cbo
V(BR)ceo
Icbo
Iebo
hfe
Po
ηc
Emitter to base breakdown voltage
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC forward current gain*
Output power
Collector efficiency
Test Conditions
Ie = 5mA, Ic = 0
Ic = 1mA, Ie = 0
Ic = 10mA, Rbe =
Vcb = 4V, Ie = 0
Veb = 4V, Ic = 0
Vce = 12V, Ic = 10mA
Vcc = 12V, Pin = 1000mW,
F = 27MHz
Limits
Min Typ Max
5
60
25
100
100
10 50 100
13 18
60 70
Unit
V
V
V
µA
µA
W
%
Note: *Pulse test, Pw = 150µS, duty = 5%
Above parameters, ratings, limits and conditions are subject to change
______________________________________________________________________________________________________
www.eleflow.co.uk
All Rights Reserved
Specifications are subject to change without notification.
©Copyright 2010 Eleflow Technologies
Page 1 of 2 03/2010
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Pages | Pages 1 | ||
Télécharger | [ C1969 ] |
No | Description détaillée | Fabricant |
C1968 | NPN Transistor - 2SC1968 | Mitsubishi |
C1968 | Silicon NPN POWER TRANSISTOR | HGSemi |
C1968A | NPN Transistor - 2SC1968A | Mitsubishi |
C1969 | NPN Transistor - 2SC1969 | Mitsubishi Electric Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
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