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ATMEL Corporation - AT25DF161

Numéro de référence 25DF161
Description AT25DF161
Fabricant ATMEL Corporation 
Logo ATMEL Corporation 





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25DF161 fiche technique
Features
Single 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
– Supports RapidS Operation
– Supports Dual-Input Program and Dual-Output Read
Very High Operating Frequencies
– 100 MHz for RapidS
– 85 MHz for SPI
– Clock-to-Output (tV) of 5 ns Maximum
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
Individual Sector Protection with Global Protect/Unprotect Feature
– 32 Sectors of 64-Kbytes Each
Hardware Controlled Locking of Protected Sectors via WP Pin
Sector Lockdown
– Make Any Combination of 64-Kbyte Sectors Permanently Read-Only
128-Byte Programmable OTP Security Register
Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
Fast Program and Erase Times
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 400 ms Typical 64-Kbyte Block Erase Time
Program and Erase Suspend/Resume
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
– 5 mA Active Read Current (Typical at 20 MHz)
– 5 µA Deep Power-Down Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-mil and 208-mil wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
16-Megabit
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25DF161
Preliminary
1. Description
The AT25DF161 is a serial interface Flash memory device designed for use in a wide
variety of high-volume consumer based applications in which program code is shad-
owed from Flash memory into embedded or external RAM for execution. The flexible
erase architecture of the AT25DF161, with its erase granularity as small as 4-Kbytes,
makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.
3687C–DFLASH–7/09

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