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Winsem Technology - POWER TRANSISTOR

Numéro de référence WTBV118DL
Description POWER TRANSISTOR
Fabricant Winsem Technology 
Logo Winsem Technology 





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WTBV118DL fiche technique
Winsem Technology Corp.
High Voltage NPN Power Transistor with Diode
Features
• High Voltage
• BVCEO : 400V
• BVCBO : 800V
• IC : 1.5A
• Silicon Triple Diffused Type
• NPN Silicon Transistor with Diode
• Free-wheeling Diode Inside
• Low Variable Storage-time Spread
• Low Base Drive Requirement
• Half Bridge Light Ballast Application
Application
• Electronic Ballasts
• Adapter
• Lighting
WTBV118DL
POWER TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Total Power Dissipation ( TO-92 )
Junction Temperature
Operating Junction and Storage Temperature Range
Version A11
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
Max rating
800
400
10
1.5
3
0.5
1
1.5
+150
-65 ~ +150
Unit
V
V
V
A
A
A
A
W
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