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HAOHAI - N-Channel MOSFET

Numéro de référence FQD1N60C
Description N-Channel MOSFET
Fabricant HAOHAI 
Logo HAOHAI 





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FQD1N60C fiche technique
1.3A, 600V, N沟道 场效应晶体管 产品参数规格书
工业型号
公司型号 通俗命名
H
FQU1N60C
FQD1N60C
H1N60U
H1N60D
1N60
HAOHAI
封装标识
U: TO-251
D: TO-252
1N60 Series
N-Channel MOSFET
包装方式
每管数量
每盒数量
条管装
载带卷盘
80/
2.5K/
4Kpcs/
5Kpcs/
每箱数量
24Kpcs
25Kpcs
 ■APPLICATION
  ELECTRONIC BALLAST
  ELECTRONIC TRANSFORMER
  SWITCH MODE POWER SUPPLY
ID=1.3A
VDS=600V
RDS(on)=13
 ■FEATURES
  LOW ON-RESISTANCE
  FAST SWITCHING
  HIGH INPUT RESISTANCE
  RoHS COMPLIANT
  Package: TO-251 and TO-252IPAK & DPAK
 ■特点
  导通电阻低、开关速度快、输入阻抗高、符合RoHS规范
 ■应用范围
  开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源
  各种充电器、电子整流器、电子变压器、逆变器、控制器
  转换器、风扇控制板、
  以及电源适配器、汽车稳压器等线性放大和功率开关电路
 ■封装形式
  TO-251IPAK)、TO-252DPAK
1N60 Series Pin Assignment
3-Lead Plastic TO-251
Package Code: U
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic TO-252
Package Code: D
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol: 1 G
3S
最大额定 Absolute Maximum RatingsTC=25℃)
参数
PARAMETER
-源电压 Drain-source Voltage
-源电压 gate-source Voltage
漏极电流 Continuous Drain Current
TC=25
TC=100
最大脉冲电流 Drain Current Pulsed  ①
耗散功率 Power Dissipation (TL=25°C)
最高结温 Junction Temperature
存储温度 Storage Temperature
单脉冲雪崩能量 Single Pulse Avalanche Energy ②
  * 漏极电流由最高结温限制  (*Drain current limited by maximum junction temperature)
符号
SYMBOL
VDS
VGS
ID
IDM
PD
Tj
TSTG
EAS
额定值
VALUE
600
±30
1.0 *
0.6 *
4.0 *
28
150
-55~+150
14
单位
UNIT
V
A
W
mJ
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
1页 共6
致力於中國功率器件優秀供應商
1N60C-UD-E2C

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