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Número de pieza | FQN1N50C | |
Descripción | N-Channel QFET MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FQN1N50C (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FQN1N50C
N-Channel QFET MOSFET
500 V, 0.38 A, 6 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
March 2013
Features
• 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A
• Low Gate Charge (Typ. 4.9 nC)
• Low Crss (Typ. 4.1 pF)
• 100% Avalanche Tested
D
G
D
S
TO-92
FQN Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)
Power Dissipation (TL = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJL
RθJA
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
©2001 Fairchild Semiconductor Corporation
FQN1N50C Rev. C0
1
G
S
FQN1N50C
500
0.38
0.24
3.04
± 30
44.4
0.38
0.21
4.5
0.89
2.08
0.017
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ
--
--
Max
60
140
Unit
°C/W
°C/W
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2001 Fairchild Semiconductor Corporation
FQN1N50C Rev. C0
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FQN1N50C.PDF ] |
Número de pieza | Descripción | Fabricantes |
FQN1N50C | N-Channel QFET MOSFET | Fairchild Semiconductor |
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