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Numéro de référence | 2SC2750 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | INCHANGE | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2750
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
·High Current Capability
·High Power Dissipation
APPLICATIONS
·Designed for high speed, high current switching industrial
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 15 A
ICM Collector Current-Peak
30 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
5A
100 W
150 ℃
-55~150
℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SC2750 ] |
No | Description détaillée | Fabricant |
2SC2750 | High Speed High Current Switching Industrial Use | ETC |
2SC2750 | Silicon NPN Power Transistor | INCHANGE |
2SC2751 | Silicon NPN Power Transistors | Savant |
2SC2752 | NPN SILICON POWER TRANSISTOR | NEC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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