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PDF IRGP6630DPbF Data sheet ( Hoja de datos )
| Número de pieza | IRGP6630DPbF | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VCES = 600V
IC = 30A, TC =100°C
IRGP6630DPbF
IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 18A
Applications
Welding
H Bridge Converters
G
E
n-channel
G
Gate
E
C
G
IRGP6630DPbF
TO‐247AC
C
Collector
GCE
IRGP6630D‐EPbF
TO‐247AD
E
Emitter
Features
Low VCE(ON) and Switching Losses
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit
Positive VCE (ON) Temperature Co-efficient
Lead-free, RoHS compliant
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP6630DPbF
IRGP6630D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6630DPbF
IRGP6630D-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IFRM @ TC = 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Repetitive Peak Forward Current
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
47
30
54
72
15
±20
192
96
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
1 www.irf.com © 2014 International Rectifier
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Max.
0.78
5.9
–––
40
Units
°C/W
April 14, 2014
1 page  
8
6 ICE = 9.0A
ICE = 18A
ICE = 36A
4
2
0
5
2000
10 15
VGE (V)
20
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
1600
1200
800
EOFF
400 EON
0
0 10 20 30 40
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; ; VCE = 400V, RG = 22; VGE = 15V
1000
800
600 EOFF
400 EON
200
0
0 20 40 60 80 100
Rg ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
IRGP6630DPbF/IRGP6630D-EPbF
72
60 TJ = 25°C
TJ = 175°C
48
36
24
12
0
4 6 8 10 12 14 16
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
100 tF
tR
10 tdON
1
0 10 20 30 40
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 22; VGE = 15V
1000
tdOFF
100
tF
tdON
tR
10
0
20 40 60 80 100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V
Submit Datasheet Feedback
April 14, 2014
5 Page 
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
IRGP6630DPbF/IRGP6630D-EPbF
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE:
THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
IRFPE30
135H
56 57
PART NUMBER
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 14, 2014
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IRGP6630DPbF.PDF ] | |
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