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FMSK1050C-D2G fiches techniques PDF

American First Semiconductor - (FMSK1020C-D2G - FMSK10200C-D2G) Schottky Barrier Rectifier

Numéro de référence FMSK1050C-D2G
Description (FMSK1020C-D2G - FMSK10200C-D2G) Schottky Barrier Rectifier
Fabricant American First Semiconductor 
Logo American First Semiconductor 





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FMSK1050C-D2G fiche technique
FMSK1020C-D2G THRU FMSK10200C-D2G
Schottky Barrier Rectifier (Single Chip)
Reverse Voltage: 20 to 200 Volts
Forward Current: 10.0 Ampere
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Metal silicon junction, majority carrier conduction
Guard ring for overvoltage protection
Low power loss, high efficiency
High current capability, Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
High temperature soldering guaranteed:
260 C/10 seconds, 0.25"(6.35mm)from case
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Package outline
TO-263
0.420(10.67)
0.380(9.65)
0.245(6.22)
MIN
0.360(9.14)
0.320(8.13)
1K 2
0.190(4.83)
0.160(4.06)
0.055(1.40)
0.045(1.14)
0.066(1.68)
0.036(0.92)
0.053(1.34)
0.047(1.20)
0.095(2.41)
0.083(2.10)
0.131(3.32)
0.090(2.29)
0.037(0.94)
0.027(0.69)
0.134(3.40)
0.105(2.67)
0.018(0.46)
0.014(0.35)
Mechanical data
Case: JEDEC TO-263 molded plastic body
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 gram
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, resistive or inductive load.
For capacitive load, derate by 20%.
Type Number
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see Fig.1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 10.0 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T A =25 C
TA =125 C
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
Typical thermal resistance (Note 2)
R JC
Operating junction temperature range
Storage temperature range
TJ
TSTG
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance from junction to case
FMSK FMSK FMSK FMSK FMSK FMSK FMSK FMSK FMSK
1020 1040 1045 1050 1060 1080 10100 10150 10200
C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G
20 40 45 50 60 80 100 150 200
14 28 31ㄅ.5 35 42 56
70 105 140
20 40 45 50 60 80 100 150 200
10.0
150.0
0.60
15
0.75
0.2
2.5
-65 to+150
-65 to+150
0.85
50
0.90 0.95
Units
Volts
Volts
Volts
Amps
Amps
Volts
mA
C/W
C
C
@ 2010 Copyright By American First Semiconductor
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