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Número de pieza | MBR860NG | |
Descripción | (MBR820NG - MBR8100NG) 8.0A Leaded Type Schottky Barrier Rectifiers | |
Fabricantes | American First Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR860NG (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Schottky Barrier Rectifier
MBR820NG THRU MBR8100NG
8.0A Leaded Type Schottky Barrier
Rectifiers - 20V-100V
Features
• Axial lead type devices for through hole design.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free parts, ex. MBR820NG-H.
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-201AD
• Terminals : Solder plated, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity :Color band denotes cathode end
• Mounting Position : Any
• Weight :Approximated 1.10 gram
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN.
IO
IFSM
TYP.
MAX. UNIT
8.0 A
150 A
IR
RθJA
CJ
TSTG
0.5
mA
50
30 OC/W
550 pF
-65 +175 OC
SYMBOLS
MBR820NG
MBR830NG
MBR840NG
MBR850NG
MBR860NG
MBR880NG
MBR8100NG
V
RR
*
M
1
(V)
20
30
40
50
60
80
100
V
R
*
MS
2
(V)
14
21
28
35
42
56
70
V
*
R
3
(V)
20
30
40
50
60
80
100
V
*
F
4
(V)
0.55
0.70
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=8.0A
@ 2010 Copyright By American First Semiconductor
Page 1/2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBR860NG.PDF ] |
Número de pieza | Descripción | Fabricantes |
MBR860NG | (MBR820NG - MBR8100NG) 8.0A Leaded Type Schottky Barrier Rectifiers | American First Semiconductor |
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