DataSheetWiki


MBR550NG fiches techniques PDF

American First Semiconductor - (MBR520NG - MBR5100NG) 5.0A Leaded Type Schottky Barrier Rectifiers

Numéro de référence MBR550NG
Description (MBR520NG - MBR5100NG) 5.0A Leaded Type Schottky Barrier Rectifiers
Fabricant American First Semiconductor 
Logo American First Semiconductor 





1 Page

No Preview Available !





MBR550NG fiche technique
Schottky Barrier Rectifier
MBR520NG THRU MBR5100NG
5.0A Leaded Type Schottky Barrier
Rectifiers - 20V-200V
Features
Axial lead type devices for through hole design.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. MBR520NG-H.
Pa,ckage outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, DO-201AD
Terminals : Solder plated, solderable per MIL-STD-202,
Method 208 guranteed
Polarity :Color band denotes cathode end
Mounting Position : Any
Weight :Approximated 1.10 gram
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 5.0 A
IFSM 150 A
0.5
IR
mA
50
RθJA
10 OC/W
CJ 380 pF
TSTG
-65
+175 OC
SYMBOLS
MBR520NG
MBR530NG
MBR540NG
MBR550NG
MBR560NG
MBR580NG
MBR5100NG
V
*
RRM
1
(V)
20
30
40
50
60
80
100
V
*
RMS
2
(V)
14
21
28
35
42
56
70
V
*
R
3
(V)
20
30
40
50
60
80
100
V
*
F
4
(V)
0.55
0.70
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage @IF=5.0A
@ 2010 Copyright By American First Semiconductor
Page 1/2

PagesPages 2
Télécharger [ MBR550NG ]


Fiche technique recommandé

No Description détaillée Fabricant
MBR550NG (MBR520NG - MBR5100NG) 5.0A Leaded Type Schottky Barrier Rectifiers American First Semiconductor
American First Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche