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American First Semiconductor - (HER301G - HER308G) 3.0A Leaded Type High Effciency Rectifiers

Numéro de référence HER308G
Description (HER301G - HER308G) 3.0A Leaded Type High Effciency Rectifiers
Fabricant American First Semiconductor 
Logo American First Semiconductor 





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HER308G fiche technique
Silicon Rectifier
3.0A Leaded Type High
Effciency Rectifiers - 50V-1000V
Features
Axial lead type devices for through hole design.
High current capability.
Ultrafast recovery time for high efficiency.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. HER301G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-201AD
Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 1.10 gram
HER301G THRU HER308G
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 50OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 3.0 A
IFSM 150 A
5.0
IR
μA
100
CJ 75 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
HER301G
HER302G
HER303G
HER304G
HER305G
HER306G
50
100
200
300
400
600
35 50
70 100
140 200
210 300
280 400
420 600
1.00
1.30
50
HER307G
HER308G
800
1000
560
700
800
1000
1.85
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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