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American First Semiconductor - (FR201G - FR207G) 2.0A Leaded Type Glass Passivated Fast Recovery Rectifiers

Numéro de référence FR201G
Description (FR201G - FR207G) 2.0A Leaded Type Glass Passivated Fast Recovery Rectifiers
Fabricant American First Semiconductor 
Logo American First Semiconductor 





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FR201G fiche technique
Silicon Rectifier
2.0A Leaded Type Glass Passivated
Fast Recovery Rectifiers-50V-1000V
Features
Axial lead type devices for through hole design.
High current capability.
Fast switching for high efficiency.
High surge current capability.
Glass passivated chip junction structure
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen-free parts, ex. FR201G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-15
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 0.40 gram
FR201G THRU FR207G
Package outline
DO-15
.140(3.6)
.104(2.6)
DIA.
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
.300(7.6)
.230(5.8)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
See Fig.2
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 2.0 A
IFSM 70 A
5.0
IR
μA
100
CJ 40 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
R
*
R
5
(nS)
FR201G
FR202G
FR203G
FR204G
50
100
200
400
35 50
70 100
140 200
280 400
1.30
150
FR205G
FR206G
FR207G
600
800
1000
420
560
700
600
800
1000
250
500
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=2.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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