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HM62V8100LTTI-5SL fiches techniques PDF

Renesas Technology - 8M SRAM

Numéro de référence HM62V8100LTTI-5SL
Description 8M SRAM
Fabricant Renesas Technology 
Logo Renesas Technology 





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HM62V8100LTTI-5SL fiche technique
HM62V8100I Series
Wide Temperature Range Version
8 M SRAM (1024-kword × 8-bit)
ADE-203-1278B (Z)
Rev. 1.0
Mar. 12, 2002
Description
The Hitachi HM62V8100I Series is 8-Mbit static RAM organized 1,048,576-word × 8-bit. HM62V8100I
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in 48 bumps chip size package with 0.75 mm bump pitch or standard 44-pin TSOP II
for high density surface mounting.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 55 ns (Max)
Power dissipation:
Active: 6.0 mW/MHz (Typ)
Standby: 1.5 µW (Typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range: –40 to +85°C

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